Title: process and technology of Semiconductor optoelectronic devices
Speaker: Song Kechang, researchers of the Corning Corporation
Time: October 29, 9:30 am
Location: Transient Building, third floor conference room
Outline of the Content
Semiconductor laser diode (LD) features in small size, light weight, long life and high electro-optical conversion efficiency. It has been widely appreciated and studied. In recent years the development of semiconductor laser technology was very rapidly. From the development of double-heterostructure multiple quantum wells to the development of MQW, from the development of the edge emission cavity to the development of vertical launch of hundreds watts chamber, all of these development in different stages have proved the rapid development of this area. The development of power is also from a few mill watts to hundreds of kilowatts, which demonstrates the development of semiconductor laser. China also has an advanced technology of semiconductor laser but the development in the semiconductor laser chips and preparation on the development of our country is not very well. There are numerous difficulties to overcome.
Researcher Song Kechang will focus on preparation and production of semiconductor laser chip, which is a core issues and key techniques in the report.
Profile of the report:
Song Kechang, male, worked as a researcher at the National Research Council Canada from 1987 to 1990, and his research area is MBE film growth. Research engineer from 1990 to 1997 in the Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario, responsible for the InP and GaAs and other related materials design, synthesis and characterization work. From1997 to 1999 worked in the U.S. Semiconductor Laser International, Binghamton Company as project manager for synthesis chip. Chief engineer in Corning for chip synthesis lab since1999
Results/Outcomes:
The earliest one to studied high power semiconductor lasers heat production and heat dissipation mechanism
Invented a wavelength detector using fabry-perot interferometer.
Invented the long-wavelength optical detectors and 4x4, 6x6 detector array, and applied to free-space interconnection CITR project board;
Reactive ion-assisted deposition using a novel development of Si and TiN growth technology;
Developed the tungsten-based non-co-Jin Oumu contactless technology with InP-based material and apply it to self-assembly technology;
Invented the Si / Ge digital optical switching devices;
More than 60 academic papers were published, and has numerous patents.
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